On-Chip Micro Temperature Controllers Based on Freestanding Thermoelectric Nano Films for Low-Power Electronics.

Multidimensional integration and multifunctional component assembly have been greatly explored in recent years to extend Moore's Law of modern microelectronics. However, this inevitably exacerbates the inhomogeneity of temperature distribution in microsystems, making precise temperature control for electronic components extremely challenging. Herein, we report an on-chip micro temperature controller including a pair of thermoelectric legs with a total area of 50 × 50 µm2, which are fabricated from dense and flat freestanding Bi2Te3-based thermoelectric nano films deposited on a newly developed nano graphene oxide membrane substrate. Its tunable equivalent thermal resistance is controlled by electrical currents to achieve energy-efficient temperature control for low-power electronics. A large cooling temperature difference of 44.5 K at 380 K is achieved with a power consumption of only 445 µW, resulting in an ultrahigh temperature control capability over 100 K mW-1. Moreover, an ultra-fast cooling rate exceeding 2000 K s-1 and excellent reliability of up to 1 million cycles are observed. Our proposed on-chip temperature controller is expected to enable further miniaturization and multifunctional integration on a single chip for microelectronics.

Exchange Bias Effect of Ni@(NiO,Ni(OH)2) Core/Shell Nanowires Synthesized by Electrochemical Deposition in Nanoporous Alumina Membranes.

Tuning and controlling the magnetic properties of nanomaterials is crucial to implement new and reliable technologies based on magnetic hyperthermia, spintronics, or sensors, among others. Despite variations in the alloy composition as well as the realization of several post material fabrication treatments, magnetic heterostructures as ferromagnetic/antiferromagnetic coupled layers have been widely used to modify or generate unidirectional magnetic anisotropies. In this work, a pure electrochemical approach has been used to fabricate core (FM)/shell (AFM) Ni@(NiO,Ni(OH)2) nanowire arrays, avoiding thermal oxidation procedures incompatible with integrative semiconductor technologies. Besides the morphology and compositional characterization of these core/shell nanowires, their peculiar magnetic properties have been studied by temperature dependent (isothermal) hysteresis loops, thermomagnetic curves and FORC analysis, revealing the existence of two different effects derived from Ni nanowires' surface oxidation over the magnetic performance of the array. First of all, a magnetic hardening of the nanowires along the parallel direction of the applied magnetic field with respect their long axis (easy magnetization axis) has been found. The increase in coercivity, as an effect of surface oxidation, has been observed to be around 17% (43%) at 300 K (50 K). On the other hand, an increasing exchange bias effect on decreasing temperature has been encountered when field cooling (3T) the oxidized Ni@(NiO,Ni(OH)2) nanowires below 100 K along their parallel lengths.

Geometrical Optimization and Thermal-Stability Characterization of Te-Free Thermoelectric Modules Based on MgAgSb/Mg3 (Bi,Sb)2.

Solid-state thermoelectric (TE) technology is a promising approach to harvest low-grade waste heat (<573 K) and converts it to useful electricity in industrial and civilian settings. After decades of efforts in improving the figure-of-merit (zT) of TE materials, the development of advanced modules has started springing up in recent years. Although high-performance modules have been largely reported based on the successful material improvement, it remains less investigated how and whether the module-level designs can further increase the conversion efficiency. Herein, following the recent demonstration of a tellurium (Te)-free TE generator, an increase is demonstrated in the efficiency by reducing both the electrical and thermal energy losses through simply optimizing geometric factors of filling factor and leg-pair numbers. These module-level optimizations enable a record conversion efficiency of 8.2% under a ∆T ≈ 260 K, thus fulfilling 90% of the theoretical efficiency of the materials and solidly exceeding the Bi2 Te3 modules. Furthermore, module robustness against > 10 160 thermal cycles while preserving a relative efficiency of 95% is demonstrated. These findings highlight the importance of the optimization strategy at the module level and demonstrate the feasibility of using Te-free thermoelectric compounds to harvest the omnipresent low-grade heat.

High-Performance n-Type Ge-Free Silicon Thermoelectric Material from Silicon Waste.

Silicon waste (SW), a byproduct from the photovoltaic industry, can be a prospective and environmentally friendly source for silicon in the field of thermoelectric (TE) materials. While thermoelectricity is not as sensitive toward impurities as other semiconductor applications, the impurities within the SW still impede the enhancement of the thermoelectric figure of merit, zT. Besides, the high thermal conductivity of silicon limits its applications as a TE material. In this work, we employ traditionally metallurgical methods in industry reducing the impurities in SW to an extremely low level in an environmentally friendly and economical way, and then the thermal conductivity of purified silicon is greatly reduced due to the implementation of multiscale phonon scattering without degrading the power factor seriously. Benefiting from these strategies, from 323 to 1123 K, for the sample made from purified silicon waste, the average zT, relevant for engineering application, is increased to 0.32, higher than that of the state-of-the-art n-type Ge-free bulk silicon materials made from commercially available silicon, but the total cost of our samples is negligible.

Interface-Dominated Topological Transport in Nanograined Bulk Bi2 Te3.

3D topological insulators (TI) host surface carriers with extremely high mobility. However, their transport properties are typically dominated by bulk carriers that outnumber the surface carriers by orders of magnitude. A strategy is herein presented to overcome the problem of bulk carrier domination by using 3D TI nanoparticles, which are compacted by hot pressing to macroscopic nanograined bulk samples. Bi2 Te3 nanoparticles well known for their excellent thermoelectric and 3D TI properties serve as the model system. As key enabler for this approach, a specific synthesis is applied that creates nanoparticles with a low level of impurities and surface contamination. The compacted nanograined bulk contains a high number of interfaces and grain boundaries. Here it is shown that these samples exhibit metallic-like electrical transport properties and a distinct weak antilocalization. A downward trend in the electrical resistivity at temperatures below 5 K is attributed to an increase in the coherence length by applying the Hikami-Larkin-Nagaoka model. THz time-domain spectroscopy reveals a dominance of the surface transport at low frequencies with a mobility of above 103 cm2 V-1 s-1 even at room temperature. These findings clearly demonstrate that nanograined bulk Bi2 Te3 features surface carrier properties that are of importance for technical applications.

Towards tellurium-free thermoelectric modules for power generation from low-grade heat.

Thermoelectric technology converts heat into electricity directly and is a promising source of clean electricity. Commercial thermoelectric modules have relied on Bi2Te3-based compounds because of their unparalleled thermoelectric properties at temperatures associated with low-grade heat (<550 K). However, the scarcity of elemental Te greatly limits the applicability of such modules. Here we report the performance of thermoelectric modules assembled from Bi2Te3-substitute compounds, including p-type MgAgSb and n-type Mg3(Sb,Bi)2, by using a simple, versatile, and thus scalable processing routine. For a temperature difference of ~250 K, whereas a single-stage module displayed a conversion efficiency of ~6.5%, a module using segmented n-type legs displayed a record efficiency of ~7.0% that is comparable to the state-of-the-art Bi2Te3-based thermoelectric modules. Our work demonstrates the feasibility and scalability of high-performance thermoelectric modules based on sustainable elements for recovering low-grade heat.

Influence of Nanoparticle Processing on the Thermoelectric Properties of (Bix Sb1-X )2 Te3 Ternary Alloys.

The synthesis of phase-pure ternary solutions of tetradymite-type materials (Bix Sb1-x )2 Te3 (x=0.25; 0.50; 0.75) in an ionic liquid approach has been carried out. The nanoparticles are characterized by means of energy-dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), and transmission electron microscopy. In addition, the role of different processing approaches on the thermoelectric properties - Seebeck coefficient as well as electrical and thermal conductivity - is demonstrated.

Synergetic Enhancement of Thermoelectric Performance by Selective Charge Anderson Localization-Delocalization Transition in n-Type Bi-Doped PbTe/Ag2Te Nanocomposite.

Considerable efforts have been devoted to enhancing thermoelectric performance, by employing phonon scattering from nanostructural architecture, and material design using phonon-glass and electron-crystal concepts. The nanostructural approach helps to lower thermal conductivity but has limited effect on the power factor. Here, we demonstrate selective charge Anderson localization as a route to maximize the Seebeck coefficient while simultaneously preserving high electrical conductivity and lowering the lattice thermal conductivity. We confirm the viability of interface potential modification in an n-type Bi-doped PbTe/Ag2Te nanocomposite and the resulting enhancement in thermoelectric figure-of-merit ZT. The introduction of random potentials via Ag2Te nanoparticle distribution using extrinsic phase mixing was determined using scanning tunneling spectroscopy measurements. When the Ag2Te undergoes a structural phase transition ( T > 420 K) from monoclinic ß-Ag2Te to cubic α-Ag2Te, the band gap in the α-Ag2Te increases due to the p -d hybridization. This results in a decrease in the potential barrier height, which gives rise to partial delocalization of the electrons, while wave packets of the holes are still in a localized state. Using this strategic approach, we achieved an exceptionally high thermoelectric figure-of-merit in n-type PbTe materials, a ZT greater than 2.0, suitable for waste heat power generation.

Intra-wire coupling in segmented Ni/Cu nanowires deposited by electrodeposition.

Segmented magnetic nanowires are a promising route for the development of three dimensional data storage techniques. Such devices require a control of the coercive field and the coupling mechanisms between individual magnetic elements. In our study, we investigate electrodeposited nanomagnets within host templates using vibrating sample magnetometry and observe a strong dependence between nanowire length and coercive field (25 nm-5 µm) and diameter (25-45 nm). A transition from a magnetization reversal through coherent rotation to domain wall propagation is observed at an aspect ratio of approximately 2. Our results are further reinforced via micromagnetic simulations and angle dependent hysteresis loops. The found behavior is exploited to create nanowires consisting of a fixed and a free segment in a spin-valve like structure. The wires are released from the membrane and electrically contacted, displaying a giant magnetoresistance effect that is attributed to individual switching of the coupled nanomagnets. We develop a simple analytical model to describe the observed switching phenomena and to predict stable and unstable regimes in coupled nanomagnets of certain geometries.

Berry phase and band structure analysis of the Weyl semimetal NbP.

Weyl semimetals are often considered the 3D-analogon of graphene or topological insulators. The evaluation of quantum oscillations in these systems remains challenging because there are often multiple conduction bands. We observe de Haas-van Alphen oscillations with several frequencies in a single crystal of the Weyl semimetal niobium phosphide. For each fundamental crystal axis, we can fit the raw data to a superposition of sinusoidal functions, which enables us to calculate the characteristic parameters of all individual bulk conduction bands using Fourier transform with an analysis of the temperature and magnetic field-dependent oscillation amplitude decay. Our experimental results indicate that the band structure consists of Dirac bands with low cyclotron mass, a non-trivial Berry phase and parabolic bands with a higher effective mass and trivial Berry phase.

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi2Se3 nanowires.

We systematically investigated the role of topological surface states on thermoelectric transport by varying the surface-to-volume ratio (s/v) of Bi2Se3 nanowires. The thermoelectric coefficients of Bi2Se3 nanowires were significantly influenced by the topological surface states with increasing the s/v. The Seebeck coefficient of Bi2Se3 nanowires decreased with increasing the s/v, while the electrical conductivity increased with increasing the s/v. This implies that the influence of metallic surface states become dominant in thermoelectric transport in thin nanowires, and the s/v is a key parameter which determines the total thermoelectric properties. Our measurements were corroborated by using a two-channel Boltzmann transport model.

Catalytic purification of directly written nanostructured Pt microelectrodes.

In the majority of cases, nanostructures prepared by focused electron beam induced deposition employing an organometallic precursor contain predominantly carbon-based ligand dissociation products. This is unfortunate with regard to using this high-resolution direct-write approach for the preparation of nanostructures for various fields, such as mesoscopic physics, micromagnetism, metaoptical phenomena in the visible spectral range, or others. Following early attempts of postprocessing Pt-based structures prepared by focused electron beam induced deposition at several hundred degrees Celsius in a reactive gas atmosphere, recent work has focused on developing in situ purification processes by using a stationary O2 flux in combination with electron irradiation to oxidize the carbonaceous component of the deposits. Here we show that this purification process is driven by the catalytic activity of Pt and in fact does not rely on the parallel electron irradiation process to function, if the O2 exposure is done in a pulsed fashion. We suggest a multistep cleaning mechanism which results in pure, nanoporous Pt. By suitably chosen beam parameters, high-resolution Pt dot and line structures with dimensions below 10 nm can thus be conveniently obtained. In temperature-dependent resistance measurements, we find the typical metallic behavior of Pt. In low-temperature magnetoresistance measurements, we see clear evidence for weak antilocalization effects and deduce a dephasing length of 234 nm at 1.2 K. We consider this to be a promising starting point for developing this approach into a versatile preparation technique for Pt-based mesoscopic structures, in particular since the purification process can be run in parallel on different deposits. We furthermore anticipate that our results will spur further research on purification approaches for nanostructures prepared by focused electron beam induced deposition containing a catalytically active metal species such as Pd-, Fe-, or Co-based deposits.

A tunable strain sensor using nanogranular metals.

This paper introduces a new methodology for the fabrication of strain-sensor elements for MEMS and NEMS applications based on the tunneling effect in nano-granular metals. The strain-sensor elements are prepared by the maskless lithography technique of focused electron-beam-induced deposition (FEBID) employing the precursor trimethylmethylcyclopentadienyl platinum [MeCpPt(Me)(3)]. We use a cantilever-based deflection technique to determine the sensitivity (gauge factor) of the sensor element. We find that its sensitivity depends on the electrical conductivity and can be continuously tuned, either by the thickness of the deposit or by electron-beam irradiation leading to a distinct maximum in the sensitivity. This maximum finds a theoretical rationale in recent advances in the understanding of electronic charge transport in nano-granular metals.